Invention Grant
- Patent Title: High voltage integrated circuit device
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Application No.: US14622819Application Date: 2015-02-13
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Publication No.: US09722019B2Publication Date: 2017-08-01
- Inventor: Masaharu Yamaji
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD
- Current Assignee: FUJI ELECTRIC CO., LTD
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2014-029679 20140219; JP2015-000615 20150106
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/761 ; H01L27/092 ; H03K17/18 ; H03K19/0185 ; H01L21/8238
Abstract:
A high voltage integrated circuit device suppresses the quantity of holes that are implanted due to a negative voltage surge, thus preventing malfunction and destruction of a high side circuit. A p−-type aperture portion has a gap portion in an n-type well region that is a voltage resistant region, penetrating the n-type well region to reach a p-type substrate, so as to enclose an n-type well region that is a high potential region.
Public/Granted literature
- US20150236013A1 HIGH VOLTAGE INTEGRATED CIRCUIT DEVICE Public/Granted day:2015-08-20
Information query
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