Invention Grant
- Patent Title: Metal cap protection layer for gate and contact metallization
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Application No.: US14852459Application Date: 2015-09-11
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Publication No.: US09722038B2Publication Date: 2017-08-01
- Inventor: Praneet Adusumilli , Hemanth Jagannathan , Alexander Reznicek , Oscar Van Der Straten , Chih-Chao Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/40 ; H01L29/66 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L21/28 ; H01L27/088
Abstract:
A CMOS fabrication process provides metal gates and contact metallization protected by metal cap layers resistant to reagents employed in downstream processing. Cobalt gates and contact metallization are accordingly feasible in CMOS processing requiring downstream wet cleans and etch processes that would otherwise compromise or destroy them. Low resistivity metal cap materials can be employed.
Public/Granted literature
- US20170077256A1 METAL CAP PROTECTION LAYER FOR GATE AND CONTACT METALLIZATION Public/Granted day:2017-03-16
Information query
IPC分类:
