Invention Grant
- Patent Title: Lateral super-junction MOSFET device and termination structure
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Application No.: US15051438Application Date: 2016-02-23
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Publication No.: US09722073B2Publication Date: 2017-08-01
- Inventor: Madhur Bobde , Lingpeng Guan , Karthik Padmanabhan , Hamza Yilmaz
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/78 ; H01L29/10 ; H01L29/08 ; H01L29/06 ; H01L29/40 ; H01L29/417
Abstract:
A lateral superjunction MOSFET device includes a gate structure and a first column connected to the lateral superjunction structure. The lateral superjunction MOSFET device includes the first column to receive current from the channel when the MOSFET is turned on and to distribute the channel current to the lateral superjunction structure functioning as the drain drift region. In some embodiment, the MOSFET device includes a second column disposed in close proximity to the first column. The second column disposed near the first column is used to pinch off the first column when the MOSFET device is to be turned off and to block the high voltage being sustained by the MOSFET device at the drain terminal from reaching the gate structure. In some embodiments, the lateral superjunction MOSFET device further includes termination structures for the drain, source and body contact doped region fingers.
Public/Granted literature
- US20160380097A1 LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE Public/Granted day:2016-12-29
Information query
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