Invention Grant
- Patent Title: Electronic device and method of manufacturing the same
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Application No.: US14665188Application Date: 2015-03-23
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Publication No.: US09722085B2Publication Date: 2017-08-01
- Inventor: Shintaro Sato , Hideyuki Jippo , Mari Ohfuchi
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2014-067104 20140327
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/04 ; H01L29/16 ; H01L29/167 ; H01L21/02 ; H01L29/73 ; H01L29/739 ; H01L29/778
Abstract:
A transistor includes a channel layer in which a plurality of graphene whose edge portions are terminated with modifying groups different from each other are bonded to each other; a gate electrode formed on the channel layer via a gate insulating film; and a source electrode and a drain electrode formed on the channel layer.
Public/Granted literature
- US20150280012A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-10-01
Information query
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