Invention Grant
- Patent Title: Semiconductor device including first gate oxide semiconductor film, and second gate
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Application No.: US14741961Application Date: 2015-06-17
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Publication No.: US09722090B2Publication Date: 2017-08-01
- Inventor: Hideaki Shishido , Satoru Saito , Yukinori Shima , Daisuke Kurosaki , Junichi Koezuka , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-Shi, Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-Shi, Kanagawa-Ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-128673 20140623
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/24 ; H01L29/06 ; H01L29/04 ; H01L29/417 ; H01L29/66
Abstract:
A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.
Public/Granted literature
- US20150372146A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE Public/Granted day:2015-12-24
Information query
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