Invention Grant
- Patent Title: Photodetector with plasmonic structure and method for fabricating the same
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Application No.: US14562357Application Date: 2014-12-05
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Publication No.: US09722108B2Publication Date: 2017-08-01
- Inventor: Chulkyun Seok , Euijoon Yoon , Yongjo Park , Chiyeon Kim
- Applicant: AGENCY FOR DEFENSE DEVELOPMENT
- Applicant Address: KR Daejeon
- Assignee: AGENCY FOR DEFENSE DEVELOPMENT
- Current Assignee: AGENCY FOR DEFENSE DEVELOPMENT
- Current Assignee Address: KR Daejeon
- Agency: LRK Patent Law Firm
- Priority: KR10-2014-0123436 20140917
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; H01L31/18 ; H01L27/144
Abstract:
A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.
Public/Granted literature
- US20160079452A1 PHOTODETECTOR WITH PLASMONIC STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-03-17
Information query
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