Invention Grant
- Patent Title: Light emitting diode die and manufacturing method thereof
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Application No.: US14853175Application Date: 2015-09-14
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Publication No.: US09722142B2Publication Date: 2017-08-01
- Inventor: Ching-Hsueh Chiu , Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agent Steven Reiss
- Priority: CN201410480585 20140919
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/24 ; H01L33/38 ; H01L33/00

Abstract:
An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.
Public/Granted literature
- US20160087151A1 LIGHT EMITTING DIODE DIE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-03-24
Information query
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