Invention Grant
- Patent Title: Semiconductor light-emitting device
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Application No.: US14830039Application Date: 2015-08-19
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Publication No.: US09722143B2Publication Date: 2017-08-01
- Inventor: Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideto Furuyama , Yoshiaki Sugizaki
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-049093 20150312
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/38 ; H01L33/40 ; H01L33/42 ; H01L33/44 ; H01L33/48 ; H01L33/50
Abstract:
According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.
Public/Granted literature
- US20160268478A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2016-09-15
Information query
IPC分类:
