Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US15056339Application Date: 2016-02-29
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Publication No.: US09722162B2Publication Date: 2017-08-01
- Inventor: Koji Kaga , Jumpei Tajima , Toshiyuki Oka , Kazuyuki Miyabe
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2015-178165 20150910
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L27/14 ; H01L27/15 ; H01L33/36

Abstract:
A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.
Public/Granted literature
- US20170077366A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2017-03-16
Information query
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