Invention Grant
- Patent Title: Semiconductor laser module
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Application No.: US15115713Application Date: 2014-11-10
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Publication No.: US09722396B2Publication Date: 2017-08-01
- Inventor: Akiyoshi Watanabe , Yoshitaka Kurosaka , Kazuyoshi Hirose , Takahiro Sugiyama , Susumu Noda
- Applicant: Kyoto University , HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Kyoto-shi, Kyoto JP Hamamatsu-shi, Shizuoka
- Assignee: KYOTO UNIVERSITY,HAMAMATSU PHOTONICS K.K.
- Current Assignee: KYOTO UNIVERSITY,HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Kyoto-shi, Kyoto JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2014-021447 20140206
- International Application: PCT/JP2014/079716 WO 20141110
- International Announcement: WO2015/118741 WO 20150813
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/18 ; H01S5/0683 ; H01S5/022 ; H01S5/187

Abstract:
A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.
Public/Granted literature
- US20170012407A1 SEMICONDUCTOR LASER MODULE Public/Granted day:2017-01-12
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