Invention Grant
- Patent Title: Semiconductor circuits
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Application No.: US15248099Application Date: 2016-08-26
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Publication No.: US09722611B2Publication Date: 2017-08-01
- Inventor: Hyun-Chul Hwang , Min-Su Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2015-0123748 20150901; KR10-2016-0003181 20160111
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K3/012 ; H03K19/0185 ; H03K19/20 ; H03K3/037 ; H03K3/356

Abstract:
A semiconductor circuit includes a first circuit and a second circuit. The first circuit is configured to generate a voltage level at a first node based on a voltage level of input data, an inverted value of the voltage level at the first node, a voltage level of a clock signal, and a voltage level at a second node; and the second circuit is configured to generate the voltage level at the second node based on the voltage level of input data, an inverted value of the voltage level at the second node, the voltage level of the clock signal, and the inverted value of the voltage level at the first node. When the clock signal is at a first level, the first and second nodes have different logical levels. When the clock signal is at a second level, the first and second nodes have the same logical level.
Public/Granted literature
- US20170063377A1 SEMICONDUCTOR CIRCUITS Public/Granted day:2017-03-02
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