Invention Grant
- Patent Title: Integrated transformer
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Application No.: US14719297Application Date: 2015-05-21
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Publication No.: US09748033B2Publication Date: 2017-08-29
- Inventor: Hsiao-Tsung Yen , Yuh-Sheng Jean , Ta-Hsun Yeh
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu
- Priority: TW103114707A 20140423; TW103124582A 20140717
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01F38/14

Abstract:
An integrated transformer includes a primary inductor and a secondary inductor wherein the primary inductor includes a B turns spiral winding formed by a first metal layer and an A turns winding formed by a second metal layer, wherein the A turns winding formed by the second metal layer and the innermost turns of the B turns spiral winding formed by the first metal layer are substantially overlapped; and the secondary inductor includes a C turns winding at least formed by the second metal layer, wherein the C turns winding formed by the second metal layer of the secondary inductor and a portion of the winding formed by the first metal layer of the primary inductor are substantially overlapped, wherein A is not bigger than B, and A is not bigger than C.
Public/Granted literature
- US20150310981A1 INTEGRATED TRANSFORMER Public/Granted day:2015-10-29
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