Invention Grant
- Patent Title: Method of manufacturing semiconductor device and sputtering apparatus
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Application No.: US14862015Application Date: 2015-09-22
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Publication No.: US09748081B2Publication Date: 2017-08-29
- Inventor: Takashi Hamaya , Hideaki Tsugane , Hidenori Suzuki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-192478 20140922
- Main IPC: C23C14/35
- IPC: C23C14/35 ; H01J37/34 ; H01L29/49 ; H01L21/8238

Abstract:
Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.
Public/Granted literature
- US20160086779A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING APPARATUS Public/Granted day:2016-03-24
Information query
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