Invention Grant
- Patent Title: Method of making interconnect structure
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Application No.: US15018661Application Date: 2016-02-08
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Publication No.: US09748134B2Publication Date: 2017-08-29
- Inventor: Po-Cheng Shih , Yu-Yun Peng , Chia Cheng Chou , Joung-Wei Liou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/532 ; H01L21/02
Abstract:
A method of making a semiconductor device including forming a first adhesion layer over a substrate. The method further includes forming a second adhesion layer over the first adhesion layer, where the second adhesion layer is formed using an inert gas with a first flow rate under a first RF power. Additionally, the method includes forming a low-k dielectric layer over the second adhesion layer, where the low-k dielectric layer is formed using the inert gas with a second flow rate under a second RF power under at least one of the following two conditions: 1) the second flow rate is different from the first flow rate; or 2) the second RF power is different from the first RF power. Furthermore, the method includes forming an opening in the dielectric layer, the second adhesion layer, and the first adhesion layer. Additionally, the method includes forming a conductor in the opening.
Public/Granted literature
- US20160155663A1 METHOD OF MAKING INTERCONNECT STRUCTURE Public/Granted day:2016-06-02
Information query
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