Invention Grant
- Patent Title: Electrostatic discharge protection device and manufacturing method thereof
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Application No.: US14456041Application Date: 2014-08-11
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Publication No.: US09748221B2Publication Date: 2017-08-29
- Inventor: Chih-Nan Cheng
- Applicant: Fitipower Integrated Technology, Inc.
- Applicant Address: TW Hsinchu
- Assignee: Fitipower Integrated Technology, Inc.
- Current Assignee: Fitipower Integrated Technology, Inc.
- Current Assignee Address: TW Hsinchu
- Agent Steven Reiss
- Priority: TW102128554A 20130809
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/265 ; H01L29/423 ; H01L29/08
Abstract:
An electrostatic discharge (ESD) protection device includes two N-metal oxide semiconductor (NMOS) elements and a doped region. The two NMOS elements are arranged on a P-substrate, and each NMOS element includes a gate, a source, and a drain. The source and the drain are arranged on two opposite sides of the gate. The doped region is implanted into an outer space of the two NMOS surrounding the two NMOS, and a PN junction is formed by the doped region and the P-substrate.
Public/Granted literature
- US20150041920A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-02-12
Information query
IPC分类:
