Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US14833502Application Date: 2015-08-24
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Publication No.: US09748360B2Publication Date: 2017-08-29
- Inventor: Takuya Hagiwara , Tetsuro Hanawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-173210 20140827
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/02 ; H01L21/3105 ; H01L27/11573 ; H01L21/311 ; H01L29/51 ; H01L21/762 ; H01L21/324 ; H01L21/027 ; H01L29/792 ; H01L21/28 ; H01L29/423
Abstract:
The present invention makes it possible to improve the reliability of a semiconductor device.In a manufacturing method of a semiconductor device according to an embodiment, when a resist pattern is formed over a cap insulating film comprising a silicon nitride film, the resist pattern is formed through the processes of coating, exposure, and development treatment of a chemical amplification type resist. Then the chemical amplification type resist is applied so as to directly touch the surface of the cap insulating film comprising the silicon nitride film and organic acid pretreatment is applied to the surface of the cap insulating film comprising the silicon nitride film before the coating of the chemical amplification type resist.
Public/Granted literature
- US20160064403A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-03-03
Information query
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