Invention Grant
- Patent Title: Integrated circuits using guard rings for ESD systems, and methods for forming the integrated circuits
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Application No.: US14312851Application Date: 2014-06-24
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Publication No.: US09748361B2Publication Date: 2017-08-29
- Inventor: Ming-Song Sheu , Jian-Hsing Lee , Yu-Chang Jong , Chun-Chien Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/66 ; H01L27/02 ; H01L29/78 ; H01L29/06 ; H01L29/10
Abstract:
An integrated circuit includes at least one transistor over a substrate, and a first guard ring disposed around the at least one transistor. The integrated circuit further includes a second guard ring disposed around the first guard ring. The integrated circuit further includes a first doped region disposed adjacent to the first guard ring, the first doped region having a first dopant type. The integrated circuit further includes a second doped region disposed adjacent to the second guard ring, the second doped region having a second dopant type.
Public/Granted literature
- US20170186741A9 INTEGRATED CIRCUITS USING GUARD RINGS FOR ESD SYSTEMS, AND METHODS FOR FORMING THE INTEGRATED CIRCUITS Public/Granted day:2017-06-29
Information query
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