Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US15206710Application Date: 2016-07-11
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Publication No.: US09748390B2Publication Date: 2017-08-29
- Inventor: Tsan-Chun Wang , Ziwei Fang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L21/8238 ; H01L21/265 ; H01L29/165 ; H01L21/324 ; H01L29/08 ; H01L29/30 ; H01L29/66
Abstract:
A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in the substrate adjacent to the NMOS gate structure. The method also includes forming a lightly doped source/drain (LDD) region in the amorphized region. The method further includes depositing a stress film over the NMOS gate structure, performing an annealing process, and removing the stress film.
Public/Granted literature
- US20160322496A1 Semiconductor Device and Method of Forming the Same Public/Granted day:2016-11-03
Information query
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