Invention Grant
- Patent Title: Silicon carbide semiconductor device with a trench
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Application No.: US15022012Application Date: 2013-10-17
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Publication No.: US09748393B2Publication Date: 2017-08-29
- Inventor: Yoichiro Tarui
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2013/078125 WO 20131017
- International Announcement: WO2015/056318 WO 20150423
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/16 ; H01L29/417 ; H01L29/423 ; H01L29/06 ; H01L29/12 ; H01L29/788 ; H01L29/08
Abstract:
It is an object of the present invention to provide a silicon carbide semiconductor device that reduces a channel resistance and increases reliability of a gate insulating film. The present invention includes a trench partially formed in a surface layer of an epitaxial layer, a well layer formed along side surfaces and a bottom surface of the trench, a source region formed in a surface layer of the well layer on the bottom surface of the trench, a gate insulating film, and a gate electrode. The gate insulating film is formed along the side surfaces of the trench and has one end formed so as to reach the source region. The gate electrode is formed along the side surfaces of the trench and formed on the gate insulating film.
Public/Granted literature
- US20160225905A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2016-08-04
Information query
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