Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; and a first electrode which is formed on an exposed region of the first semiconductor layer created by mesa etching portions of the second semiconductor layer, the active layer and the first semiconductor layer, and includes a contact layer in contact with the first semiconductor layer, a reflective layer formed on the contact layer, while facing an exposed region of the active layer created by mesa etching and reflecting light, and an anti-rupture layer formed on the reflective layer.