Invention Grant
- Patent Title: Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element
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Application No.: US15146565Application Date: 2016-05-04
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Publication No.: US09748455B2Publication Date: 2017-08-29
- Inventor: Shuji Shioji , Masafumi Kuramoto
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2013-266437 20131225; JP2014-233970 20141118
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L23/15 ; H01L29/41 ; H01L33/46
Abstract:
To provide a semiconductor element that can have the high adhesion between a substrate made of an oxide or the like and a metal film, a semiconductor element includes a substrate made of an oxide, a semiconductor element structure provided on an upper surface of the substrate, and a metal film provided on a lower surface of the substrate, in which the metal film contains nanoparticles made of an oxide.
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