Invention Grant
- Patent Title: Method for producing a device
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Application No.: US15248109Application Date: 2016-08-26
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Publication No.: US09748476B2Publication Date: 2017-08-29
- Inventor: Fujio Masuoka , Hiroki Nakamura
- Applicant: Unisantis Electronics Singapore Pte. Ltd.
- Applicant Address: SG Peninsula Plaza
- Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee Address: SG Peninsula Plaza
- Agency: Brinks Gilson & Lione
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/336 ; H01L31/113 ; H01L29/06 ; H01L45/00 ; H01L27/24
Abstract:
A method for producing a device includes depositing a lower electrode metal and a film whose resistance changes. The film whose resistance changes and the lower electrode metal are etched to form a pillar-shaped phase-change layer and a lower electrode. A reset gate insulating film and a reset gate metal are deposited and etched to form reset gates.
Public/Granted literature
- US20160365511A1 METHOD FOR PRODUCING A DEVICE Public/Granted day:2016-12-15
Information query
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