A resistive random access memory device includes a first electrode; a solid metal oxide electrolyte; and a second electrode, the first and second electrodes being respectively arranged on either side of the solid metal oxide electrolyte, the second electrode being capable of supplying mobile ions circulating in the solid metal oxide electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a potential difference is applied between the first and second electrodes. The device further includes an interface layer including a metal oxide, the interface layer extending at least partially onto the first electrode, the solid metal oxide electrolyte extending at least partially onto the interface layer.