Invention Grant
- Patent Title: Semiconductor constructions and memory arrays
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Application No.: US15287609Application Date: 2016-10-06
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Publication No.: US09748480B2Publication Date: 2017-08-29
- Inventor: Andrea Redaelli , Cinzia Perrone
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Well St. John P.S.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L45/00 ; H01L23/525 ; H01L27/24 ; H01L23/48

Abstract:
Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
Public/Granted literature
- US20170025606A1 Semiconductor Constructions and Memory Arrays Public/Granted day:2017-01-26
Information query
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