Invention Grant
- Patent Title: Semiconductor laser device and backlight device using the semiconductor laser device
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Application No.: US15081284Application Date: 2016-03-25
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Publication No.: US09748733B2Publication Date: 2017-08-29
- Inventor: Eiichiro Okahisa
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2015-064576 20150326; JP2016-056087 20160318
- Main IPC: F21V7/04
- IPC: F21V7/04 ; H01S5/022 ; F21V8/00 ; G02B6/42

Abstract:
The semiconductor laser device includes a base member having a recess that opens upward, a semiconductor laser element disposed on a bottom surface of the recess, and a light reflecting member being disposed forward of a light emitting surface of the semiconductor laser element and including a light reflecting surface to reflect laser light emitted from the semiconductor laser element. The semiconductor laser element and the light reflecting member are arranged such that a direction of an optical axis of light that is reflected by the light reflecting member is different from a direction that is perpendicular to a lower surface of the base member.
Public/Granted literature
- US20160285234A1 SEMICONDUCTOR LASER DEVICE AND BACKLIGHT DEVICE USING THE SEMICONDUCTOR LASER DEVICE Public/Granted day:2016-09-29
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