Invention Grant
- Patent Title: LDO life extension circuitry
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Application No.: US14827239Application Date: 2015-08-14
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Publication No.: US09753472B2Publication Date: 2017-09-05
- Inventor: Burt Lee Price , Dhaval Rajeshbhai Shah , Jonathan Liu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: MG-IP Law, P.C.
- Main IPC: G05F1/00
- IPC: G05F1/00 ; G05F1/56 ; G05F1/575 ; G05F1/565

Abstract:
Systems and methods relate to extending life of a low-dropout (LDO) voltage regulator. A differential amplifier of the LDO voltage regulator includes switches that can be selectively turned on or off. When the LDO voltage regulator is bypassed or turned off (or not active), a first switch is turned on to selectively couple gates of a first input transistor and a second input transistor of the differential amplifier, to maintain the gates at a same voltage. The first switch is turned off to decouple the gates when the LDO voltage regulator is active. Further, a second switch can be turned on or off to selectively couple or decouple, respectively, the gate of the second input transistor to an output voltage of the LDO voltage regulator, based on whether the LDO voltage regulator is active or not active, respectively.
Public/Granted literature
- US20170045901A1 LDO LIFE EXTENSION CIRCUITRY Public/Granted day:2017-02-16
Information query
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