Invention Grant
- Patent Title: Memory device and reference circuit thereof
-
Application No.: US14929076Application Date: 2015-10-30
-
Publication No.: US09754639B2Publication Date: 2017-09-05
- Inventor: Chia-Fu Lee , Yu-Der Chih , Hon-Jarn Lin , Yi-Chun Shih
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/22

Abstract:
A device is disclosed that includes memory cells, a reference circuit, and a sensing unit. Each of the memory cells is configured to store bit data. The reference circuit includes reference switches and reference storage units. The reference switches are disposed. A first reference storage unit of the reference storage units is configured to generate a first signal having a first logic state when a first reference switch the reference switches is turned on. A second reference storage unit of the reference storage units is configured to generate a second signal having a second logic state when a second reference switch of the reference switches is turned on. The sensing unit is configured to determine a logic state of the bit data of one of the memory cells according to the first signal and the second signal.
Public/Granted literature
- US20170125071A1 MEMORY DEVICE AND REFERENCE CIRCUIT THEREOF Public/Granted day:2017-05-04
Information query