In an embodiment, a dynamic random-access memory (DRAM) system configures an inactive portion of a DRAM die to operate in accordance with a self-refresh mode that is characterized by refreshes of the DRAM die being controlled by a local DRAM die controller integrated into the DRAM die. The DRAM system also configures an active portion of the DRAM die to operate in accordance with a controller-managed refresh mode while the inactive portion of the DRAM die operates in the self-refresh mode, the controller-managed refresh mode characterized by refreshes of the DRAM die being controlled by a controller that is external to the DRAM die.