Invention Grant
- Patent Title: Low-power semiconductor device
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Application No.: US14940654Application Date: 2015-11-13
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Publication No.: US09754659B2Publication Date: 2017-09-05
- Inventor: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2001-324357 20011023
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/417 ; G11C5/14 ; G11C11/412

Abstract:
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
Public/Granted literature
- US20160071573A1 Semiconductor Device Public/Granted day:2016-03-10
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