Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15384714Application Date: 2016-12-20
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Publication No.: US09754676B2Publication Date: 2017-09-05
- Inventor: Shinya Okuno , Shigeki Nagasaka , Toshiyuki Kouchi
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/32 ; G11C16/10 ; G11C16/26 ; G06F5/06 ; G06F13/16

Abstract:
A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.
Public/Granted literature
- US20170103816A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-04-13
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