Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US14785471Application Date: 2014-05-14
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Publication No.: US09754766B2Publication Date: 2017-09-05
- Inventor: Naohiko Okunishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2013-106895 20130521
- International Application: PCT/JP2014/002549 WO 20140514
- International Announcement: WO2014/188681 WO 20141127
- Main IPC: H03K19/17
- IPC: H03K19/17 ; H01J37/32 ; H01F27/00 ; C23C16/44 ; C23C16/50 ; H03H1/00

Abstract:
A resonance frequency is adjusted or optimized by shifting the resonance frequency without reducing an impedance function or a withstand voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a line such as a power feed line or a signal line from an electrical member other than a high frequency electrode within a processing vessel. Regarding winding pitches, each of the solenoid coils 104(1) and 104(2) is divided to multiple sections K1, K2, . . . in a coil axis direction, and, a winding pitch pi in each section Ki (i=1, 2, . . . ) is set independently. Comb teeth M inserted into winding gaps of both solenoid coils 104(1) and 104(2) are formed on inner surfaces of multiple rod-shaped comb-teeth member 114 provided adjacent to the solenoid coils 104(1) and 104(2).
Public/Granted literature
- US20160126067A1 PLASMA PROCESSING APPARATUS Public/Granted day:2016-05-05
Information query
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