Invention Grant
- Patent Title: Hybridization fin reveal for uniform fin reveal depth across different fin pitches
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Application No.: US15278747Application Date: 2016-09-28
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Publication No.: US09754798B1Publication Date: 2017-09-05
- Inventor: Zhenxing Bi , Donald F. Canaperi , Thamarai S. Devarajan , Sivananda K. Kanakasabapathy , Fee Li Lie , Peng Xu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutnjian & Bitetto, PC
- Agent Vazken Alexanian
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/76 ; H01L29/66 ; H01L29/06 ; H01L21/311 ; H01L21/762 ; H01L29/78
Abstract:
A method for uniform fin reveal depth for semiconductor devices includes dry etching a dielectric material to reveal semiconductor fins by a quasi-atomic layer etching (quasi-ALE) process to achieve depth uniformity across different fin pitches. A lateral bias induced by the quasi-ALE process is compensated for by isotropically etching the dielectric material.
Information query
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