- Patent Title: Integrated passive device having improved linearity and isolation
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Application No.: US14165868Application Date: 2014-01-28
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Publication No.: US09754814B2Publication Date: 2017-09-05
- Inventor: Paul D. Hurwitz
- Applicant: Newport Fab, LLC
- Applicant Address: US CA Newport Beach
- Assignee: Newport Fab, LLC
- Current Assignee: Newport Fab, LLC
- Current Assignee Address: US CA Newport Beach
- Agency: Farjami & Farjami LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; H01L49/02 ; H01L27/01

Abstract:
Disclosed is a structure for improved electrical signal isolation in a semiconductor substrate between integrated passive devices (IPDs) and an associated method for the structure's fabrication. The structure includes an amorphized region in the semiconductor substrate, a dielectric layer formed over the amorphized region, and IPDs formed over the dielectric layer. The amorphized region is not recrystallized and may be formed by utilizing an inert implant that does not charge-dope the amorphized region, while forming a plurality of charge carrier traps at an interface between the amorphized region and the dielectric layer to prevent a parasitic conduction layer from forming at the interface. The inert implant may include one of Argon, Xenon and Germanium. In many implementations, the structure does not include an active device.
Public/Granted literature
- US20140252535A1 Integrated Passive Device Having Improved Linearity and Isolation Public/Granted day:2014-09-11
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