Invention Grant
- Patent Title: Composite substrate and method for producing same
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Application No.: US15025830Application Date: 2014-09-29
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Publication No.: US09754815B2Publication Date: 2017-09-05
- Inventor: Hideki Matsushita , Masanobu Kitada
- Applicant: KYOCERA Corporation
- Applicant Address: JP Kyoto-Shi, Kyoto
- Assignee: KYOCERA CORPORATION
- Current Assignee: KYOCERA CORPORATION
- Current Assignee Address: JP Kyoto-Shi, Kyoto
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-203049 20130930; JP2014-063553 20140326
- International Application: PCT/JP2014/075802 WO 20140929
- International Announcement: WO2015/046483 WO 20150402
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; B23K20/00 ; H01L21/20
Abstract:
A composite substrate 1 according to the present invention comprises: a supporting substrate 10 that is formed of an insulating material; a semiconductor part 20 that is disposed over the supporting substrate 10; and interfacial inclusions 30 that are present at the interface between the supporting substrate 10 and the semiconductor part 20 and contains Ni and Fe so that the ratio of Ni to Fe is 0.4 or more. Consequently, the present invention is able to provide a highly reliable composite substrate wherein the interfacial inclusions 30 are prevented from diffusing into the semiconductor part 20.
Public/Granted literature
- US20160247712A1 COMPOSITE SUBSTRATE AND METHOD FOR PRODUCING SAME Public/Granted day:2016-08-25
Information query
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