Invention Grant
- Patent Title: Semiconductor device having sensing functionality
-
Application No.: US13650023Application Date: 2012-10-11
-
Publication No.: US09754854B2Publication Date: 2017-09-05
- Inventor: Ralf Otremba , Marco Seibt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/495 ; H01L23/31 ; H01L25/07 ; H01L25/18 ; H01L23/00

Abstract:
A semiconductor package includes a power semiconductor chip having a control electrode, a first load electrode and a second load electrode. The package also includes a first terminal conductor electrically coupled to the control electrode, a second terminal conductor electrically coupled to the first load electrode and a third terminal conductor electrically coupled to the second load electrode. Further, the package includes a temperature sensor electrically coupled to at least two of the first, second and third terminal conductor.
Public/Granted literature
- US20140103902A1 Semiconductor Device Having Sensing Functionality Public/Granted day:2014-04-17
Information query
IPC分类: