Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15242788Application Date: 2016-08-22
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Publication No.: US09754877B2Publication Date: 2017-09-05
- Inventor: Yukio Takahashi , Hitoshi Matsuura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-166814 20150826
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L29/06 ; H01L29/40 ; H01L27/02 ; H01L29/66 ; H01L29/739 ; H01L21/66
Abstract:
A semiconductor device includes: a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer.
Public/Granted literature
- US20170062336A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-02
Information query
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