A semiconductor memory device according to one embodiment includes a plurality of lower electrode films stacked separated from each other, an upper electrode film provided above the plurality of lower electrode films, a semiconductor pillar extending in an arrangement direction of the plurality of lower electrode films and the upper electrode film, a memory film provided between the semiconductor pillar and one of the plurality of lower electrode films and between the semiconductor pillar and the upper electrode film, and a metal-containing layer provided at least one of on a lower surface and an upper surface of the one of the plurality of lower electrode films and between the one of the plurality of lower electrode films and the memory film, the metal-containing layer having a composition different from a composition of the plurality of lower electrode films. The upper electrode film is in contact with the memory film.