Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US13931684Application Date: 2013-06-28
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Publication No.: US09754919B2Publication Date: 2017-09-05
- Inventor: Hiroshi Kuroda , Hideo Koike
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2012-149284 20120703
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H04B5/00 ; H04B7/24 ; H01L23/31 ; H01L23/544 ; H01L23/00 ; H01L25/18

Abstract:
Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.
Public/Granted literature
- US20140011453A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-01-09
Information query
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