Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14453367Application Date: 2014-08-06
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Publication No.: US09754920B2Publication Date: 2017-09-05
- Inventor: Naoki Yamada
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-163965 20130807
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00

Abstract:
The reliability of a semiconductor device is improved. A semiconductor device in accordance with one embodiment has a plurality of stacked semiconductor chips. Further, a plurality of inter-chip connection members (conductive members) arranged between the semiconductor chips, and establishing an electrical connection between the semiconductor chips include a first inter-chip connection member (conductive member) for passing therethrough a current with a first frequency, and a plurality of second inter-chip connection members (conductive members) for passing therethrough a signal current with a second frequency higher than the first frequency. Further, in the second inter-chip connection members, at least some of the second inter-chip connection members arranged adjacent to each other are in contact with each other, and are separated from the first inter-chip connection member.
Public/Granted literature
- US20150041991A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-12
Information query
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