A method for fabricating a static random access memory is provided. The method includes providing a semiconductor substrate. The method also includes forming a plurality of transistors on the semiconductor substrate. Further, the method includes forming a first metal layer having a word line electrically connecting with a partial number of the transistors. Further, the method also includes forming a second metal layer having a first bit line, a second bit line, a first power source line and second power source lines electrically connect with a partial number of the transistors.