Invention Grant
- Patent Title: Thin film transistor, fabricating method thereof, array substrate and display device
-
Application No.: US14435772Application Date: 2014-09-17
-
Publication No.: US09754970B2Publication Date: 2017-09-05
- Inventor: Dongfang Wang , Jiangbo Chen
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201410162697 20140422
- International Application: PCT/CN2014/086701 WO 20140917
- International Announcement: WO2015/161619 WO 20151029
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/12 ; H01L29/786 ; H01L29/04 ; H01L21/02
Abstract:
The present invention provides a thin film transistor, a fabricating method thereof, an array substrate and a display device. The fabricating method of the thin film transistor of the present invention comprises: forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film; and heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer.
Public/Granted literature
- US20160336349A1 THIN FILM TRANSISTOR, FABRICATING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2016-11-17
Information query
IPC分类:
