Invention Grant
- Patent Title: Vertical thin film transistors with surround gates
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Application No.: US15240998Application Date: 2016-08-18
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Publication No.: US09754999B1Publication Date: 2017-09-05
- Inventor: Seje Takaki , Manabu Hayashi , Ryousuke Itou , Takuro Maede , Kengo Kajiwara , Tetsuya Yamada , Yusuke Oda
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L27/11551
- IPC: H01L27/11551 ; H01L27/24 ; H01L27/11556 ; H01L27/11582 ; H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/417
Abstract:
A method is provided that includes forming a transistor by forming a gate disposed in a first direction above a substrate, the gate including a first bridge portion and a second bridge portion, forming the first bridge portion extending in the first direction and disposed near a top of the gate, and forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.
Information query
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