- Patent Title: Transparent compound semiconductor and production method therefor
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Application No.: US14390215Application Date: 2013-04-05
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Publication No.: US09755025B2Publication Date: 2017-09-05
- Inventor: Kookrin Char , Jisoon Ihm
- Applicant: RFTRON CO., LTD.
- Applicant Address: KR Seoul
- Assignee: RFTRON CO., LTD.
- Current Assignee: RFTRON CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Hauptman Ham, LLP
- Priority: KR10-2012-0035582 20120405; KR10-2012-0109812 20121004
- International Application: PCT/KR2013/002866 WO 20130405
- International Announcement: WO2013/151378 WO 20131010
- Main IPC: H01B1/08
- IPC: H01B1/08 ; H01L31/00 ; H01L29/24 ; H01L21/02 ; H01L31/0224 ; H01L31/18 ; C23C14/08 ; C23C16/40 ; C30B25/02 ; C30B29/22 ; H01L33/42 ; G01N27/12
Abstract:
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba1−XLaXSnO3 (0
Public/Granted literature
- US20150048282A1 TRANSPARENT COMPOUND SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR Public/Granted day:2015-02-19
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