Invention Grant
- Patent Title: Method of manufacturing a transistor with oxidized cap layer
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Application No.: US15176446Application Date: 2016-06-08
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Publication No.: US09755044B2Publication Date: 2017-09-05
- Inventor: Wen-Chia Liao
- Applicant: DELTA ELECTRONICS, INC.
- Applicant Address: TW Taoyuan
- Assignee: DELTA ELECTRONICS, INC.
- Current Assignee: DELTA ELECTRONICS, INC.
- Current Assignee Address: TW Taoyuan
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/20 ; H01L21/336 ; H01L21/311 ; H01L29/778 ; H01L29/205 ; H01L29/51 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L29/20 ; H01L29/423
Abstract:
A semiconductor device includes a substrate, a channel layer, a spacer layer, a barrier layer, and an oxidized cap layer. The channel layer is disposed on or above the substrate. The spacer layer is disposed on the channel layer. The barrier layer is disposed on the spacer layer. The oxidized cap layer is disposed on the barrier layer. The oxidized cap layer is made of oxynitride.
Public/Granted literature
- US20160284816A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-09-29
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