Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same
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Application No.: US14956056Application Date: 2015-12-01
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Publication No.: US09755054B2Publication Date: 2017-09-05
- Inventor: Myung Kwan Ryu , Ki Hwan Kim , Kap Soo Yoon , Hyeon Jun Lee , Jeong Uk Heo
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Agency: Robert E. Bushnell, Esq.
- Priority: KR10-2015-0012375 20150126
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/417 ; H01L29/786 ; H01L29/423 ; H01L21/306 ; H01L21/324

Abstract:
There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor.The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.
Public/Granted literature
- US20160218197A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-07-28
Information query
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