Invention Grant
- Patent Title: Semiconductor photoreceiving device
-
Application No.: US15068205Application Date: 2016-03-11
-
Publication No.: US09755097B2Publication Date: 2017-09-05
- Inventor: Haruhiko Yoshida , Kazuya Ohira , Mizunori Ezaki
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-058196 20150320
- Main IPC: H01L31/109
- IPC: H01L31/109 ; H01L31/0352 ; H01L31/0304 ; H01L31/0232 ; H01L31/0224 ; H01L31/105

Abstract:
According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.
Public/Granted literature
- US20160276517A1 SEMICONDUCTOR PHOTORECEIVING DEVICE Public/Granted day:2016-09-22
Information query
IPC分类: