Invention Grant
- Patent Title: Integrated RF limiter
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Application No.: US14957101Application Date: 2015-12-02
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Publication No.: US09755587B1Publication Date: 2017-09-05
- Inventor: Thomas William Arell
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H03G3/30
- IPC: H03G3/30 ; H03F1/52 ; H03F3/193

Abstract:
A limiter circuit is integrated into an RF power amplifier. The limiter circuit automatically starts adding attenuation at the input of the RF power amplifier after a predetermined input power level threshold is exceeded, thereby extending the safe input drive level to protect the amplifier. In a preferred embodiment of the invention, the limiter circuit is implemented using a pseudomorphic high electron mobility transistor (PHEMT) device or a metal semiconductor field effect transistor (MESPET) device. Diode connected transistors or Schottky diodes may also be used in the limiter circuit.
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