Invention Grant
- Patent Title: Efficient solution for removing EUV native defects
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Application No.: US15172482Application Date: 2016-06-03
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Publication No.: US09759998B2Publication Date: 2017-09-12
- Inventor: Yen-Kai Huang , Hsun-Chuan Shih , Yuan-Chih Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G03B27/32 ; G03B27/54 ; G03F1/72 ; G03F1/22 ; G03F1/44 ; G03F7/20 ; G03F1/46 ; G03F1/80 ; H01J37/32 ; G03F1/84

Abstract:
The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by identifying a printable native defect within an EUV mask substrate that violates one or more sizing thresholds. A first section of the EUV mask substrate including the printable native defect is removed to form a concavity within the EUV mask substrate. A multi-layer replacement section that is devoid of a printable native defect is inserted into the concavity.
Public/Granted literature
- US20160282713A1 EFFICIENT SOLUTION FOR REMOVING EUV NATIVE DEFECTS Public/Granted day:2016-09-29
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