Invention Grant
- Patent Title: Memory circuit and stack type memory system including the same
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Application No.: US15096578Application Date: 2016-04-12
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Publication No.: US09761288B2Publication Date: 2017-09-12
- Inventor: Min Chang Kim , Chang Hyun Kim , Do Yun Lee , Jae Jin Lee , Hun Sam Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2015-0187630 20151228
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C7/14 ; G11C7/10

Abstract:
A memory circuit may be provided. The memory circuit may include a memory array. The memory circuit may include an input and output path circuit coupled to a probe pad and a bump pad, and may be configured to input and output a signal between an exterior of the memory circuit and the memory array. The memory circuit may include a scanning circuit configured to generate a sensing signal by sensing a signal outputted through the bump pad while performing scanning of at least one of a reference voltage and a test strobe signal.
Public/Granted literature
- US20170186469A1 MEMORY CIRCUIT AND STACK TYPE MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2017-06-29
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