Invention Grant
- Patent Title: Method of polishing SiC substrate
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Application No.: US14924938Application Date: 2015-10-28
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Publication No.: US09761454B2Publication Date: 2017-09-12
- Inventor: Katsuyoshi Kojima , Takeshi Sato
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2014-225757 20141106
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L21/02 ; B24B37/04 ; B24B37/10 ; H01L29/16
Abstract:
A method of polishing a SiC substrate by supplying a polishing liquid and bringing a polishing pad into contact with the SiC substrate is provided. The polishing liquid contains a permanganate, inorganic salts having an oxidizing ability, and water. The method includes: a first polishing step of polishing the SiC substrate by use of a first polishing pad; and a second polishing step of polishing the SiC substrate by use of a second polishing pad softer than the first polishing pad after the first polishing step.
Public/Granted literature
- US20160133466A1 METHOD OF POLISHING SiC SUBSTRATE Public/Granted day:2016-05-12
Information query
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